| PART |
Description |
Maker |
| DO-213AA |
Surface Mount Recti
|
Shenzhen Luguang Electronic Technology Co., Ltd
|
| CGP20/54 GP20/100 |
2 A, 1400 V, SILICON, RECTIFIER DIODE, DO-204AC
|
VISHAY SEMICONDUCTORS
|
| VSKEL240-14S20 |
250 A, 1400 V, SILICON, RECTIFIER DIODE
|
VISHAY SEMICONDUCTORS
|
| 1214-30 |
30 W, 28 V, 1200-1400 MHz common base transistor
30 Watts, 28 Volts, Pulsed Radar 1200 - 1400 MHz
BJT
|
GHZTECH[GHz Technology]
|
| MAMX-000900-1061LT |
Silicon Double Balanced HMIC Mixer 700-1400 MHz
|
M/A-COM Technology Solutions, Inc.
|
| T9GH1809C2DH H160922DH |
1400 A, 1800 V, SCR
1400 A, 1600 V, SCR
|
POWEREX INC
|
| IRKCL240-12S20 IRKCL240-12S10 IRKCL240-14S30 |
250 A, 1200 V, SILICON, RECTIFIER DIODE
240 A, 1400 V, SILICON, RECTIFIER DIODE
|
VISHAY INTERTECHNOLOGY INC
|
| SM30CXC614 SM30CXC624 SM14CXC170 SM02CXC190 SM02CX |
1160 A, 3000 V, SILICON, RECTIFIER DIODE
1106 A, 3000 V, SILICON, RECTIFIER DIODE
440 A, 1400 V, SILICON, RECTIFIER DIODE
760 A, 200 V, SILICON, RECTIFIER DIODE
440 A, 200 V, SILICON, RECTIFIER DIODE
940 A, 2000 V, SILICON, RECTIFIER DIODE
1610 A, 2600 V, SILICON, RECTIFIER DIODE
|
WESTCODE SEMICONDUCTORS LTD
|
| 1214-300M |
L-Band 1200-1400 MHz, Class C, Common Base-Pulsed; P(out) (W): 300; P(in) (W): 40; Gain (dB): 8.75; Vcc (V): 40; Pulse Width (µsec): 150; Duty Cycle (%): 10; Case Style: 55ST-1 L BAND, Si, NPN, RF POWER TRANSISTOR
300 Watts - 40 Volts, 150ms, 10% Radar 1200 - 1400 MHz
|
Microsemi, Corp.
Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
|
| VBO22-12NO7 VBO22-14NO7 VBO22-08NO7 |
21 A, 1200 V, SILICON, BRIDGE RECTIFIER DIODE
21 A, 1400 V, SILICON, BRIDGE RECTIFIER DIODE
21 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE
|
IXYS, Corp.
IXYS CORP
|
| IRKH41-12 IRKH41-14 |
Silicon Controlled Rectifier, 62.8 A, 1200 V, SCR, TO-240AA
Silicon Controlled Rectifier, 62.8 A, 1400 V, SCR, TO-240AA
|
Vishay Semiconductors
|
|
